Messerschmitt, Felix

Education

M.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2011.
B.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2008.

Publications

• Kubicek, M.; Schmitt, R.; Messerschmitt, F.; Rupp, J.L.M.
  Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultra-Thin Strontium Titanate-Based Resistive Switching Bits
  ACS Nano, 9, 11, 10737 (2015)
• Messerschmitt, F.; Kubicek, M.; Rupp, J.L.M.
  How does Moisture affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
  Advanced Functional Materials, 25, 32, 5117 (2015)
• Messerschmitt, F.; Kubicek, M.; Schweiger S.; Rupp, J.L.M.
  Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO_3-δ: The Memristor-based Cottrell Analysis Connecting Material to Device Performance
  Advanced Functional Materials, 24, 47, 7448 (2014)
• Schweiger, S.; Kubicek, M.; Messerschmitt, F.; Murer, C.; Rupp, J.L.M.
  A Micro-Dot Multilayer Oxide Device: Let’s Tune the Strain-Ionic Transport Interaction
  ACS Nano, 8, 5, 5032 (2014)

Patents

Rupp, J.L.M.; Schweiger, S.; Messerschmitt, F.
Strained Multilayer Resistive-switching Memory Elements
Patent Application PCT/EP2014/001020: Priority: April 19, 2013 (pending)

Fellowships, Awards and Honors

• Spark Award 2014 "Highly increased performance of memristive devices"
  Award for the most promising invention of 2013 at ETH Zurich
• 2014 Chemistry Travel Award by the Swiss Academy of Science (SCNAT), the Swiss Chemical Society (SCS) and the Swiss Society for Food Chemistry (SSFC)

Research

Felix Messerschmitt is currently working on resistive switching memories, also called Resistive Random Access Memories (ReRAMs). These non-volatile memory technology is a promising candidate to replace current transistor-based random access memories. The focus of this project focuses on a better understanding of the switching kinetics and mechanistics in perovskites (ABO₃). Therefore the resistive switching of SrTi_xFeY_1-xO_3-δ as a model material system is investigated which allows to alter the band gap, carrier concentration and mobility to a broad extent.